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APTGT300A60D3G
Phase leg Trench + Field Stop IGBT Power Module
3
VCES = 600V IC = 300A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q1 4 5 Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 400 300 600 20 940 600A @ 520V Unit V
September, 2008 1-5 APTGT300A60D3G - Rev 0
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT300A60D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 300A Tj = 150C VGE = VCE , IC = 4.8 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 500 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 VGE = 15V Tj = 25C VBus = 600V Tj = 150C IC = 300A Tj = 25C RG = 2.2 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 18.5 1.2 0.5 3.2 110 50 490 50 130 60 530 70 3.1 3.3 12 12.5 1500 ns Max Unit nF C
ns
mJ
A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 300A VR = 300V IF = 300A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 500 750 300 1.6 1.5 100 150 14.4 30.4 3.4 7.2 2 Unit V A A V ns C mJ
September, 2008 2-5 APTGT300A60D3G - Rev 0
di/dt =4800A/s
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APTGT300A60D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.16 0.25 175 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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3-5
APTGT300A60D3G - Rev 0
September, 2008
APTGT300A60D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 500 400
VGE=13V TJ = 150C VGE=19V
500 400
IC (A) IC (A)
300 200 100
TJ=25C
TJ=150C
300 200
VGE=15V
VGE=9V
100 0
0 0 0.5 1 1.5 2 2.5
VCE (V) Transfert Characteristics
TJ=25C
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
Energy losses vs Collector Current 25 20 E (mJ) 15 10 5 0
Er VCE = 300V VGE = 15V RG = 2.2 TJ = 150C Eoff
500 400 300 200 100 0 5
IC (A)
TJ=150C
Eon
6
7
8 VGE (V)
9
10
11
0
100
200
300 IC (A)
400
500
600
Switching Energy Losses vs Gate Resistance 35 30 25 E (mJ) 20 15 10 5 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15
Er VCE = 300V VGE =15V IC = 300A TJ = 150C Eoff
Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 100 0 0 100 200 300 400 VCE (V) 500 600 700
VGE=15V TJ=150C RG=2.2
Eon
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W)
IGBT
0.12 0.08 0.04
0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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4-5
APTGT300A60D3G - Rev 0
September, 2008
0.16
0.9
APTGT300A60D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
VCE=300V D=50% RG=2.2 TJ=150C
Forward Characteristic of diode 500 400 300 200 100 0
TJ=150C TJ=25C
60
ZVS
ZCS
40
Hard switching
20
0 0 100 200 IC (A) 300 400
IF (A)
Tc=85C
0
0.4
0.8
1.2 1.6 VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W)
Diode
0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT300A60D3G - Rev 0
September, 2008

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